The development of SDR provides new ideas of design and higher demands to power amplifiers, and high performance power amplifiers have promote the development of SDR. The dissertation designs a wide-band power amplifier in view of the characteristic and demands of SDR. Firstly, several theories ...
Cripps. RF Power Amplifiers for Wireless Communications [M]. London:ARTECH HOUSE,2006. [3] C. G. Gentzler, S. K. Leong. Broadband VHF/UHF Amplifier Design Using Coaxial Transformers [J]. High 110 Frequency Electronics,2003, May:42~51. [4] 徐兴福. ADS2008射频电路设计与仿真实例[M]. ...
以MOSFET作为驱动级,以硅VDMOS器件作 Theory 为放大级,采用推挽结构和传输线变压器阻抗变换 (3):359—362 Raab PB.Power andtransmitters 5 FH,SteveC,Kenington amplifiers 网络相结合的方法,研制出了可用于50MHz~ forRFandmicrowave.IEEETransactionsonMicrowaveand Theory 200 MHz连续波输出功率为80w的宽带高功率...
关键词:宽带功率放大器;推挽结构;漏栅负反馈;传输线巴伦中图分类号:TN92410VHF/UHFBroadbandPowerAmplifierDesignandImplementationFUJixiang,YUCuiping,GAOJinchun(SchoolofElectronicEngineering,BeijingUniversityofPostsandTelecommunications,15Beijing100876)Abstract:Broadbandfrequencyhoppingisoftenusedinhighlyreliablecommunication...
Prototype RF power amplifiers have been designed, fabricated, and assembled, and are being tested. High voltage DC power became available through innovative re-engineering of an installed system. Details of the electrical and mechanical design of the FPA and ancillary systems are discussed. 展开 ...
Power amplifiersRadio equipmentVery high frequencyBroadbandEfficiencyReliability(Electronics)The report describes a high-efficiency broadband RF Power amplifier with collector efficiencies as high as 80% at 40 W output in the frequency range from 30 to 76 MHz. The amplifier was designed to fit the RT...
RD15HVF1-101 New Original Silicon MOSFET Power Transistor 175MHz 520MHz 15W For VHF/UHF High power amplifiers applications $2.09 - $2.31 Min. order: 1 piece Easy Return 2.1-Channel TPA3251D2 BT 5.1 Digital Amplifier Module High And Low Tone Subwoofer 220Wx2 350W Amplifier Board XY-S350H...
Silicon carbide (SiC) Metal-Semiconductor Field Effects Transistors (MESFET) have been mostly employed in microwave and broadband radio frequency (RF) power amplifiers. This paper investigates an alternative use in high efficiency, class-E RF power amplifiers in the VHF range. Both simulation and ex...
Maximum RF output power up to 500Watt. Antennas type: high gains umbrella antennas (Standard) for all bands.(Directional antennas are also optional) Power source: DC (External) & AC mains (external) both. High Power RF amplifiers with VSWR and temperature self-protection technology. TG-...
if the main processor unit generates switching control signals in response to the sensed failures on sensing a failure in any of the channel cards and the transceivers or a failure in any of the high-power amplifiers, all supporting ... CHA, Young-Jae,LEE, Mun-Kyu - US 被引量: 1发表:...